bar 67-02w mar-20-2000 1 silicon pin diode low loss rf switch rf attenuator low series capacitance and resistance 1 ves05991 2 type marking pin configuration package bar 67-02w t 1=c 2=a scd-80 maximum ratings parameter symbol value unit diode reverse voltage v r 150 v forward current i f 200 ma operating temperature range t op -55 ... 150 c storage temperature t stg -55 ... 150 thermal resistance parameter symbol value unit junction - soldering point r thjs 115 k/w
bar 67-02w mar-20-2000 2 electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 150 - - v reverse current v r = 100 v i r - - 20 na forward voltage i f = 50 ma v f - 0.95 1.2 v ac characteristics diode capacitance v r = 35 v, f = 1 mhz v r = 0 v, f = 100 mhz c t - - 0.4 0.35 0.6 0.9 pf forward resistance i f = 5 ma, f = 100 mhz r f - 1.5 1.8 zero bias conductance v r = 0 v, f = 100 mhz g p - 220 - s charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma rr - 0.7 - s series inductance l s - 0.8 - nh
bar 67-02w mar-20-2000 3 forward current i f = f ( v f ) t a = 25c 0.5 0.6 0.7 0.8 0.9 1.0 v 1.2 v f -2 10 -1 10 0 10 1 10 2 10 3 10 ma i f diode capacitance c t = f ( v r ) f = 1mhz 0 5 10 15 20 25 v 35 v r 0.0 0.1 0.2 0.3 0.4 0.5 0.6 pf 0.8 c t forward resistance r f = f ( i f ) f = 100mhz 10 -3 10 -2 10 -1 10 0 10 1 10 3 ma i f -1 10 0 10 1 10 2 10 3 10 ohm r f
bar 67-02w mar-20-2000 4 forward current i f = f ( t a *; t s ) *): mounted on alumina 15mm x 16.7mm x 0.7m 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 ma 250 i f t s t a permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 i fmax / i fdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
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